@inproceedings{pond_comparison_1994, title = {Comparison of the optical properties of oxide films deposited by reactive-dc-magnetron sputtering with those of ion-beam-sputtered and electron-beam-evaporated films}, volume = {2114}, abstract = {Films produced by reactive-dc-magnetron sputtering are generally dense and homogeneous. Thus their optical properties are similar to those of ion-beam-sputtered films and distinct from the properties of the more porous electron-beam evaporated films. In this paper, the measured results of the dispersive refractive index n and extinction coefficient k are presented for single- layer films of SiO{\textless}SUB{\textgreater}2{\textless}/SUB{\textgreater}, Al{\textless}SUB{\textgreater}2{\textless}/SUB{\textgreater}O{\textless}SUB{\textgreater}3{\textless}/SUB{\textgreater}, HfO{\textless}SUB{\textgreater}2{\textless}/SUB{\textgreater}, Ta{\textless}SUB{\textgreater}2{\textless}/SUB{\textgreater}O{\textless}SUB{\textgreater}5{\textless}/SUB{\textgreater}, Nb{\textless}SUB{\textgreater}2{\textless}/SUB{\textgreater}O{\textless}SUB{\textgreater}5{\textless}/SUB{\textgreater}, and TiO{\textless}SUB{\textgreater}2{\textless}/SUB{\textgreater} produced by the three processes. For some of the magnetron-sputtered films, it was necessary to modulate the dc power supply in order to suppress the electrical arcing at the target.}, urldate = {2017-11-26}, publisher = {International Society for Optics and Photonics}, author = {Pond, Bradley J. and Du, Tu and Sobczak, J. and Carniglia, Charles K.}, month = jul, year = {1994}, pages = {345--355}, file = {Full Text PDF:C\:\\Users\\cyanc\\Zotero\\storage\\YLX7TETE\\Pond et al. - 1994 - Comparison of the optical properties of oxide film.pdf:application/pdf;Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\YUPSCZP7\\12.180926.html:text/html} } @article{johnson_optical_1974, title = {Optical constants of transition metals: {Ti}, {V}, {Cr}, {Mn}, {Fe}, {Co}, {Ni}, and {Pd}}, volume = {9}, shorttitle = {Optical constants of transition metals}, abstract = {The optical constants n and k were determined for some transition metals (Ti, V, Cr, Mn, Fe, Co, Ni, Pd) from reflection and transmission measurements on vacuum-evaporated polycrystalline thin films at room temperature, in the spectral range 0.5-6.5 eV. Three optical measurements were inverted to determine the film thickness d as well as n and k. The estimated error in d was ±2 Å and that in n, k was less than ±2\% over most of the spectral range. Transmission measurements were made on films in the thickness range 200-500 Å. Many transition metals oxidize rapidly in the air and so measurements on those samples were performed in a nitrogen atmosphere. A detailed analysis of the effect of oxidation on the measured quantities indicates that it is small. The effects on the optical constants of the film thickness and the evaporation rate are discussed. Some recent theoretical calculations of the interband optical conductivity are compared with the results for V, Cr, and Ni. In addition, some other recent experiments are compared with our results.}, number = {12}, urldate = {2017-11-26}, journal = {Physical Review B}, author = {Johnson, P. B. and Christy, R. W.}, month = jun, year = {1974}, pages = {5056--5070}, file = {APS Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\9PFECI3B\\PhysRevB.9.html:text/html} } @article{grilli_ultrathin_2015, series = {Transparent {Conductive} {Materials}, {TCM} {Series} (2014)}, title = {Ultrathin and stable {Nickel} films as transparent conductive electrodes}, volume = {594}, abstract = {Ultrathin stable transparent conductive nickel films were deposited on quartz substrates by radio frequency sputtering at room temperature. Such films showed visible transmittance up to 80\% and conductivity up to 1.8×104S/cm, further increased to 2,3×105S/cm by incorporation of a micrometric silver grid. Atomic force microscopy and scanning electron microscopy revealed quite compact, smooth and low surface roughness films. Excellent film stability, ease, fast and low cost process fabrication make these films highly competitive compared to indium tin oxide alternative transparent conductors. Films were characterized regarding their morphological, optical and electrical properties.}, number = {Part B}, urldate = {2017-11-26}, journal = {Thin Solid Films}, author = {Grilli, M. L. and Di Sarcina, I. and Bossi, S. and Rinaldi, A. and Pilloni, L. and Piegari, A.}, month = nov, year = {2015}, keywords = {Indium-free electrodes, Metal films, Nickel, Transparent electrodes, Ultra-thin films}, pages = {261--265}, file = {ScienceDirect Full Text PDF:C\:\\Users\\cyanc\\Zotero\\storage\\4BPZP9TI\\Grilli et al. - 2015 - Ultrathin and stable Nickel films as transparent c.pdf:application/pdf;ScienceDirect Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\QT48XXEI\\S0040609015005490.html:text/html} } @book{pedrotti_introduction_2007, address = {Upper Saddle River, N.J}, edition = {3rd ed}, title = {Introduction to optics}, publisher = {Pearson/Prentice Hall}, author = {Pedrotti, Frank L. and Pedrotti, Leno Matthew and Pedrotti, Leno S.}, year = {2007}, keywords = {Optics} } @article{haacke_new_1976, title = {New figure of merit for transparent conductors}, volume = {47}, number = {9}, urldate = {2017-11-26}, journal = {Journal of Applied Physics}, author = {Haacke, G.}, month = sep, year = {1976}, pages = {4086--4089}, file = {Full Text PDF:C\:\\Users\\cyanc\\Zotero\\storage\\UYILX56H\\Haacke - 1976 - New figure of merit for transparent conductors.pdf:application/pdf;Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\ZH9I3F3A\\1.html:text/html} } @article{sondheimer_mean_1952, title = {The mean free path of electrons in metals}, volume = {1}, number = {1}, urldate = {2017-11-26}, journal = {Advances in Physics}, author = {Sondheimer, E.h.}, month = jan, year = {1952}, pages = {1--42}, file = {Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\G68XTSUQ\\00018735200101151.html:text/html} } @article{fuchs_conductivity_1938, title = {The conductivity of thin metallic films according to the electron theory of metals}, volume = {34}, abstract = {The conductivity of thin films of the alkali metals has recently been measured in the H. W. Wills Physical Laboratory, Bristol*. It was found that as the thickness of the film is decreased to that of a few atomic layers the conductivity drops below that of the bulk metal. In the papers quoted the hypothesis was put forward that this effect is due to the shortening of the mean free paths of the conduction electrons of the metal by collisions with the boundaries of the film. The experimental results were compared with a formula derived on the basis of this hypothesis. This formula was, however, obtained subject to a number of simplifying assumptions, and it is the first purpose of this paper to obtain a more accurate formula. I also compare this formula with experiment, and make certain deductions about the surfaces of thin films.}, number = {1}, urldate = {2017-11-26}, journal = {Mathematical Proceedings of the Cambridge Philosophical Society}, author = {Fuchs, K.}, month = jan, year = {1938}, pages = {100--108}, file = {Full Text PDF:C\:\\Users\\cyanc\\Zotero\\storage\\GZWAFF9U\\Fuchs - 1938 - The conductivity of thin metallic films according .pdf:application/pdf;Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\WB9CHSNL\\B67FD21662E4DC38745343C4CF8455FD.html:text/html} } @incollection{ghosh_basics_2013, series = {Springer {Theses}}, title = {Basics of {Ultrathin} {Metal} {Films} and {Their} {Use} as {Transparent} {Electrodes}}, abstract = {The beginning of “Thin Film Science” can possibly be traced back to the observation of Grove in 1852 who noted that metal films are formed by sputtering of cathodes with high energy positive ions. Since then it has come a long way and today it has become a fully-fledged academic discipline which has led to many industrial and household products. There is a phenomenal rise in thin metal films research, like their counterpart dielectric films, due to their extensive applications in electronics, optics, aviation, space science, defence and several other industries. These investigations have led to numerous inventions in the form of active devices and passive components such as piezo-electric devices, sensor elements, storage of solar energy and its conversion to other forms, reflecting and anti-reflecting coatings and many others. Furthermore, due to compactness, better performance and reliability coupled with low cost production, thin film devices and components are preferred over their bulk counterparts.}, language = {en}, urldate = {2017-11-26}, booktitle = {Ultrathin {Metal} {Transparent} {Electrodes} for the {Optoelectronics} {Industry}}, publisher = {Springer, Heidelberg}, author = {Ghosh, Dhriti Sundar}, year = {2013}, pages = {11--32}, file = {Full Text PDF:C\:\\Users\\cyanc\\Zotero\\storage\\VLHKEXHE\\Ghosh - 2013 - Basics of Ultrathin Metal Films and Their Use as T.pdf:application/pdf;Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\KDTJQSCZ\\978-3-319-00348-1_2.html:text/html} } @article{ghosh_widely_2009, title = {Widely transparent electrodes based on ultrathin metals}, volume = {34}, language = {EN}, number = {3}, urldate = {2017-11-26}, journal = {Optics Letters}, author = {Ghosh, D. S. and Martinez, L. and Giurgola, S. and Vergani, P. and Pruneri, V.}, month = feb, year = {2009}, keywords = {Deposition and fabrication, Materials and process characterization, Spectral properties, Transparent conductive coatings}, pages = {325--327}, file = {Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\RWS9K8TQ\\abstract.html:text/html} } @article{ellmer_past_2012, title = {Past achievements and future challenges in the development of optically transparent electrodes}, volume = {6}, copyright = {2012 Nature Publishing Group}, abstract = {{\textless}p{\textgreater}Increasing demand for raw materials means that alternatives to indium-tin oxide are desired for optically transparent electrode applications. Carbon nanotube, metal nanowire networks and regular metal grids have been investigated as possible options. In this review, these materials and recently rediscovered graphene are compared with the usual transparent conductive oxides.{\textless}/p{\textgreater}}, language = {En}, number = {12}, urldate = {2017-11-26}, journal = {Nature Photonics}, author = {Ellmer, Klaus}, month = dec, year = {2012}, pages = {809}, file = {Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\4CYKMKS5\\nphoton.2012.html:text/html} } @article{martinez_stable_2009, title = {Stable transparent {Ni} electrodes}, volume = {31}, abstract = {We have deposited ultrathin ({\textless}10nm) Ni films (UTMFs) on a dielectric substrate with high uniformity and investigated their stability, i.e. how their optical and electrical properties are affected by oxidation. We show that the oxidation process can be exploited to achieve stable films: an appropriate temperature cycle in the presence of oxygen produces a protective oxide layer on top of the metallic film which prevents further oxidation. The achieved stability, combined with large optical transmission and electrical conductivity, makes UTMFs high quality transparent electrodes for the optoelectronics industry, seriously competing with widely used transparent conductive oxides.}, number = {8}, urldate = {2017-11-26}, journal = {Optical Materials}, author = {Martínez, Luis and Ghosh, Dhriti Sundar and Giurgola, Stefano and Vergani, Paolo and Pruneri, Valerio}, month = jun, year = {2009}, pages = {1115--1117}, file = {ScienceDirect Full Text PDF:C\:\\Users\\cyanc\\Zotero\\storage\\29NKJXET\\Martínez et al. - 2009 - Stable transparent Ni electrodes.pdf:application/pdf;ScienceDirect Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\8XEAXJRN\\S092534670800311X.html:text/html} } @article{kaplan_silicon_2002, title = {Silicon as a standard material for infrared reflectance and transmittance from 2 to 5 μm}, volume = {43}, abstract = {We have investigated the specular reflectance and transmittance of polished, high-resistivity single-crystal Si in the spectral range from 2 to 5 μm. Measurements were performed with a nearly collimated (≈0.7° divergence) beam at angles of incidence from 12° to 80°, and a spectral resolution of 16 cm−1. The measured values agree with the expected values obtained from the published index of refraction of Si to within 0.002. This represents a substantial reduction in experimental uncertainty compared to previous results and demonstrates the usefulness of Si as a standard material for infrared reflectance and transmittance.}, number = {6}, urldate = {2017-11-26}, journal = {Infrared Physics \& Technology}, author = {Kaplan, Simon G and Hanssen, Leonard M}, month = dec, year = {2002}, keywords = {Index of refraction, Infrared, Polarization, Reflectance, Transmittance}, pages = {389--396}, file = {ScienceDirect Snapshot:C\:\\Users\\cyanc\\Zotero\\storage\\NEGRX35G\\S1350449502001615.html:text/html} }