Simulation of Interdigitated Heterojunction Back-Contact Solar Cell Device Parameters
An interdigitated heterojunction back-contact solar cell device was modeled in Silvaco, and different device parameters were simulated and compared for their performance. Results found that several trends based on the simulation results. Smaller wafer and intrinsic amorphous silicon layers were preferred. Higher doping densities in the amorphous silicon forming the PIN junction were found to have a strong effect on performance. The distance between the anode and cathode contacts did not indicate a performance difference, but increased performance was observed when the cathode contact was larger than the anode, as opposed to a symmetrical contact formation. These results may be useful to optimize future IHBC solar cell designs.
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